onsemi FDG6317NZ

onsemi · FETs & Power MOSFETs · MPN FDG6317NZ

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Specifications

Gate Charge(Qg)1.1nC@4.5V
Drain to Source Voltage20V
Current - Continuous Drain(Id)700mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation300mW
RDS(on)400mΩ@4.5V
Number2 N-Channel
Input Capacitance(Ciss)66.5pF

Technical details

N-Channel Array 20V 700mA 300mW Surface Mount SC-70-6

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