onsemi · FETs & Power MOSFETs · MPN FDG6316P
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| Gate Charge(Qg) | 2.4nC@4.5V |
|---|---|
| Drain to Source Voltage | 12V |
| Output Capacitance(Coss) | 60pF |
| Current - Continuous Drain(Id) | 700mA |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Pd - Power Dissipation | 300mW |
| Reverse Transfer Capacitance (Crss@Vds) | 48pF |
| RDS(on) | 650mΩ@1.8V |
| Number | - |
| Input Capacitance(Ciss) | 146pF |
| Type | P-Channel |
P-Channel 12V 0.7A 0.3W Surface Mount SC-70-6