onsemi · FETs & Power MOSFETs · MPN FDG6306P
No reviews yet — be the first to review onsemi FDG6306P.
| Drain to Source Voltage | 20V |
|---|---|
| Gate Charge(Qg) | 2nC@4.5V |
| Current - Continuous Drain(Id) | 600mA |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Pd - Power Dissipation | 300mW |
| RDS(on) | 420mΩ@4.5V |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 114pF |
20V 600mA 1.5V 300mW 420mΩ@4.5V 2 N-Channel SC-70-6 Single FETs, MOSFETs RoHS