onsemi · FETs & Power MOSFETs · MPN FDG6304P
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| Gate Charge(Qg) | 1.5nC@4.5V |
|---|---|
| Drain to Source Voltage | 25V |
| Current - Continuous Drain(Id) | 410mA |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Pd - Power Dissipation | 300mW |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 1.1Ω@4.5V |
| Number | 2 P-Channel |
| Input Capacitance(Ciss) | 62pF |
25V 410mA 1.5V 300mW 1.1Ω@4.5V 2 P-Channel SOT-363 Single FETs, MOSFETs RoHS