onsemi · FETs & Power MOSFETs · MPN FDG6301N
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| Gate Charge(Qg) | 400pC@4.5V |
|---|---|
| Drain to Source Voltage | 25V |
| Current - Continuous Drain(Id) | 220mA |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Pd - Power Dissipation | 300mW |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 4Ω@4.5V |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 9.5pF |
| Type | N-Channel |
N-Channel Array 25V 0.22A 0.3W Surface Mount SC-70-6