onsemi · FETs & Power MOSFETs · MPN FDG410NZ
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | - |
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 2.2A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 700mV |
| Pd - Power Dissipation | - |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | - |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | - |
20V 2.2A 700mV 1 N-channel SC-70-6 Single FETs, MOSFETs RoHS