onsemi · FETs & Power MOSFETs · MPN FDG316P
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| Gate Charge(Qg) | 5nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 1.6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 6W |
| Reverse Transfer Capacitance (Crss@Vds) | 25pF |
| RDS(on) | 300mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 165pF |
| Type | P-Channel |
30V 1.6A 3V 6W 300mΩ@4.5V 1 P-Channel P-Channel SC-70-6 Single FETs, MOSFETs RoHS