onsemi · FETs & Power MOSFETs · MPN FDG313N
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| Drain to Source Voltage | 25V |
|---|---|
| Gate Charge(Qg) | 2.3nC@4.5V |
| Current - Continuous Drain(Id) | 950mA |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Pd - Power Dissipation | 750mW |
| Reverse Transfer Capacitance (Crss@Vds) | 9pF |
| RDS(on) | 600mΩ@2.7V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 50pF |
| Type | N-Channel |
25V 950mA 1.5V 750mW 600mΩ@2.7V 1 N-channel N-Channel SC-88(SC-70-6) Single FETs, MOSFETs RoHS