onsemi · FETs & Power MOSFETs · MPN FDG312P
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| Gate Charge(Qg) | 5nC@4.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 1.2A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Pd - Power Dissipation | 750mW |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 180mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 330pF |
20V 1.2A 1.5V 750mW 180mΩ@4.5V 1 P-Channel SC-70-6 Single FETs, MOSFETs RoHS