onsemi FDFS2P753Z

onsemi · FETs & Power MOSFETs · MPN FDFS2P753Z

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Specifications

Gate Charge(Qg)9.3nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation1.6W
Reverse Transfer Capacitance (Crss@Vds)110pF
RDS(on)180mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)455pF
TypeP-Channel

Technical details

30V 3A 3V 1.6W 180mΩ@4.5V 1 P-Channel P-Channel SOIC-8 Single FETs, MOSFETs RoHS

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