onsemi · FETs & Power MOSFETs · MPN FDFME3N311ZT
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 1.4nC@4.5V |
| Drain to Source Voltage | 30V |
| Output Capacitance(Coss) | 20pF |
| Current - Continuous Drain(Id) | 1.8A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Pd - Power Dissipation | 600mW |
| Reverse Transfer Capacitance (Crss@Vds) | 10pF |
| RDS(on) | 299mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 75pF |
30V 1.8A 1.5V 600mW 299mΩ@4.5V 1 N-channel N-Channel UMLP-6(1.6x1.6) Single FETs, MOSFETs RoHS