onsemi · FETs & Power MOSFETs · MPN FDFMA2P029Z-F106
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| Gate Charge(Qg) | 10nC@4.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 3.1A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Pd - Power Dissipation | 1.4W |
| RDS(on) | 95mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 720pF |
20V 3.1A 1.5V 1.4W 95mΩ@4.5V 1 P-Channel WDFN-6 Single FETs, MOSFETs RoHS