onsemi · FETs & Power MOSFETs · MPN FDD8N50NZTM
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| Gate Charge(Qg) | 14nC@10V |
|---|---|
| Drain to Source Voltage | 500V |
| Current - Continuous Drain(Id) | 6.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 90W |
| Reverse Transfer Capacitance (Crss@Vds) | 8pF |
| RDS(on) | 850mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 735pF |
N-Channel 500V 6.5A 90W Surface Mount TO-252(DPAK)