onsemi · FETs & Power MOSFETs · MPN FDD8896-F085
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| Gate Charge(Qg) | 60nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 17A;94A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 80W |
| Reverse Transfer Capacitance (Crss@Vds) | 300pF |
| RDS(on) | 5.7mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.525nF |
30V 2.5V 80W 5.7mΩ@10V 1 N-channel TO-252-2 Single FETs, MOSFETs RoHS