onsemi FDD8896

onsemi · FETs & Power MOSFETs · MPN FDD8896

No reviews yet — be the first to review onsemi FDD8896.

Specifications

Gate Charge(Qg)60nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)490pF
Current - Continuous Drain(Id)94A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation80W
Reverse Transfer Capacitance (Crss@Vds)300pF
RDS(on)6.8mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)2.525nF
TypeN-Channel

Technical details

N-Channel 30V 94A 80W Surface Mount TO-252AA

Related FETs & Power MOSFETs