onsemi FDD8880-SN00319

onsemi · FETs & Power MOSFETs · MPN FDD8880-SN00319

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)23nC@10V
Current - Continuous Drain(Id)58A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1.2V
Pd - Power Dissipation55W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)9mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)-

Technical details

30V 58A 1.2V 55W 9mΩ@10V 1 N-channel Single FETs, MOSFETs RoHS

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