onsemi FDD8880_NL

onsemi · FETs & Power MOSFETs · MPN FDD8880_NL

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)23nC@10V
Output Capacitance(Coss)260pF
Current - Continuous Drain(Id)58A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation55W
Reverse Transfer Capacitance (Crss@Vds)150pF
RDS(on)12mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)1.26nF
TypeN-Channel

Technical details

30V 58A 2.5V 55W 12mΩ@4.5V 1 N-channel N-Channel TO-252(DPAK) Single FETs, MOSFETs RoHS

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