onsemi · FETs & Power MOSFETs · MPN FDD8880
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| Gate Charge(Qg) | 31nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Output Capacitance(Coss) | 260pF |
| Current - Continuous Drain(Id) | 89A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 55W |
| Reverse Transfer Capacitance (Crss@Vds) | 150pF |
| RDS(on) | 12mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.26nF |
| Type | N-Channel |
N-Channel 30V 89A 55W Surface Mount TO-252AA