onsemi · FETs & Power MOSFETs · MPN FDD8870-F085
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 118nC@10V |
| Output Capacitance(Coss) | 990pF |
| Current - Continuous Drain(Id) | 160A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 160W |
| Reverse Transfer Capacitance (Crss@Vds) | 590pF |
| RDS(on) | 4.4mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.16nF |
| Type | N-Channel |
30V 160A 2.5V 160W 4.4mΩ@4.5V 1 N-channel N-Channel TO-252AA Single FETs, MOSFETs RoHS