onsemi FDD8796

onsemi · FETs & Power MOSFETs · MPN FDD8796

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Specifications

Gate Charge(Qg)52nC@10V
Drain to Source Voltage25V
Output Capacitance(Coss)605pF
Current - Continuous Drain(Id)35A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation88W
Reverse Transfer Capacitance (Crss@Vds)475pF
RDS(on)5.7mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.61nF
TypeN-Channel

Technical details

25V 35A 2.5V 88W 5.7mΩ@10V 1 N-channel N-Channel TO-252 Single FETs, MOSFETs RoHS

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