onsemi FDD8782

onsemi · FETs & Power MOSFETs · MPN FDD8782

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Specifications

Gate Charge(Qg)25nC@10V
Drain to Source Voltage25V
Current - Continuous Drain(Id)35A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation50W
Reverse Transfer Capacitance (Crss@Vds)240pF
RDS(on)14mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)1.22nF
TypeN-Channel

Technical details

25V 35A 2.5V 50W 14mΩ@4.5V 1 N-channel N-Channel TO-252(DPAK) Single FETs, MOSFETs RoHS

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