onsemi FDD8780

onsemi · FETs & Power MOSFETs · MPN FDD8780

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Specifications

Gate Charge(Qg)29nC@10V
Drain to Source Voltage25V
Output Capacitance(Coss)355pF
Current - Continuous Drain(Id)60A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation50W
Reverse Transfer Capacitance (Crss@Vds)270pF
RDS(on)12mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)1.44nF
TypeN-Channel

Technical details

25V 60A 2.5V 50W 12mΩ@4.5V 1 N-channel N-Channel TO-252 Single FETs, MOSFETs RoHS

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