onsemi · FETs & Power MOSFETs · MPN FDD86580-F085
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| Gate Charge(Qg) | 30nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 50A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.2V |
| Pd - Power Dissipation | 75W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 19mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.43nF |
N-Channel 60V 50A 75W Surface Mount DPAK(TO-252)