onsemi · FETs & Power MOSFETs · MPN FDD86569-F085
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 52nC@10V |
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 150W |
| Reverse Transfer Capacitance (Crss@Vds) | 47pF |
| RDS(on) | 5.7mΩ |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.52nF |
60V 4V 150W 5.7mΩ 1 N-channel TO-252 Single FETs, MOSFETs RoHS