onsemi · FETs & Power MOSFETs · MPN FDD86567-F085
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| Gate Charge(Qg) | 82nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 100A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 227W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 3.2mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.95nF |
N-Channel 60V 100A 227W Surface Mount DPAK(TO-252)