onsemi FDD86540

onsemi · FETs & Power MOSFETs · MPN FDD86540

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Specifications

Configuration-
Gate Charge(Qg)90nC@10V
Drain to Source Voltage60V
Current - Continuous Drain(Id)-
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation127W
Reverse Transfer Capacitance (Crss@Vds)90pF
RDS(on)4.1mΩ
Number1 N-channel
Input Capacitance(Ciss)6.34nF

Technical details

60V 127W 4.1mΩ 1 N-channel TO-252 Single FETs, MOSFETs RoHS

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