onsemi · FETs & Power MOSFETs · MPN FDD86369
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| Gate Charge(Qg) | 36nC |
|---|---|
| Drain to Source Voltage | 80V |
| Current - Continuous Drain(Id) | 90A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.7V |
| Pd - Power Dissipation | 150W |
| Reverse Transfer Capacitance (Crss@Vds) | 16pF |
| RDS(on) | 7.9mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.53nF |
N-Channel 80V 90A 150W Surface Mount DPAK(TO-252)