onsemi · FETs & Power MOSFETs · MPN FDD86367-F085
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 88nC@10V |
| Drain to Source Voltage | 80V |
| Current - Continuous Drain(Id) | 100A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | - |
| Reverse Transfer Capacitance (Crss@Vds) | 31pF |
| RDS(on) | - |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.84nF |
80V 100A 4V 1 N-channel TO-252 Single FETs, MOSFETs RoHS