onsemi FDD86252

onsemi · FETs & Power MOSFETs · MPN FDD86252

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Specifications

Gate Charge(Qg)16nC@10V
Drain to Source Voltage150V
Current - Continuous Drain(Id)27A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation89W
Reverse Transfer Capacitance (Crss@Vds)10pF
RDS(on)52mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)985pF

Technical details

N-Channel 150V 27A 89W Surface Mount DPAK(TO-252)

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