onsemi · FETs & Power MOSFETs · MPN FDD86250-F085
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| Gate Charge(Qg) | 28nC@10V |
|---|---|
| Drain to Source Voltage | 150V |
| Current - Continuous Drain(Id) | 50A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | - |
| Pd - Power Dissipation | 160W |
| Reverse Transfer Capacitance (Crss@Vds) | 10pF |
| RDS(on) | 19.4mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.9nF |
N-Channel 150V 50A 160W Surface Mount DPAK(TO-252)