onsemi · FETs & Power MOSFETs · MPN FDD86250
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| Gate Charge(Qg) | 33nC@10V |
|---|---|
| Drain to Source Voltage | 150V |
| Current - Continuous Drain(Id) | 51A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 132W |
| Reverse Transfer Capacitance (Crss@Vds) | 15pF |
| RDS(on) | 31mΩ@6V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.11nF |
150V 51A 2V 132W 31mΩ@6V 1 N-channel TO-252 Single FETs, MOSFETs RoHS