onsemi FDD86250

onsemi · FETs & Power MOSFETs · MPN FDD86250

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Specifications

Gate Charge(Qg)33nC@10V
Drain to Source Voltage150V
Current - Continuous Drain(Id)51A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation132W
Reverse Transfer Capacitance (Crss@Vds)15pF
RDS(on)31mΩ@6V
Number1 N-channel
Input Capacitance(Ciss)2.11nF

Technical details

150V 51A 2V 132W 31mΩ@6V 1 N-channel TO-252 Single FETs, MOSFETs RoHS

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