onsemi · FETs & Power MOSFETs · MPN FDD86110
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| Gate Charge(Qg) | 35nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 50A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 127W |
| Reverse Transfer Capacitance (Crss@Vds) | 30pF |
| RDS(on) | 10.2mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.265nF |
N-Channel 100V 50A 127W Surface Mount DPAK(TO-252)