onsemi FDD86102LZ

onsemi · FETs & Power MOSFETs · MPN FDD86102LZ

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Specifications

Gate Charge(Qg)-
Drain to Source Voltage100V
Output Capacitance(Coss)245pF
Current - Continuous Drain(Id)35A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation54W
Reverse Transfer Capacitance (Crss@Vds)15pF
RDS(on)31mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)1.54nF
TypeN-Channel

Technical details

N-Channel 100V 35A 54W Surface Mount DPAK(TO-252)

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