onsemi · FETs & Power MOSFETs · MPN FDD850N10LD
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| Drain to Source Voltage | 100V |
|---|---|
| Gate Charge(Qg) | 28.9nC@10V |
| Output Capacitance(Coss) | 105pF |
| Current - Continuous Drain(Id) | 15.3A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 42W |
| Reverse Transfer Capacitance (Crss@Vds) | 42pF |
| RDS(on) | 75mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.465nF |
| Type | N-Channel |
100V 15.3A 2.5V 42W 75mΩ@10V 1 N-channel N-Channel TO-252-4 Single FETs, MOSFETs RoHS