onsemi · FETs & Power MOSFETs · MPN FDD8453LZ
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| Gate Charge(Qg) | 64nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 50A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 65W |
| Reverse Transfer Capacitance (Crss@Vds) | 285pF |
| RDS(on) | 6.7mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.515nF |
40V 50A 1V 65W 6.7mΩ@10V 1 N-channel TO-252 Single FETs, MOSFETs RoHS