onsemi · FETs & Power MOSFETs · MPN FDD8447L-F085
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| Gate Charge(Qg) | 37nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 50A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 65W |
| Reverse Transfer Capacitance (Crss@Vds) | 150pF |
| RDS(on) | - |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.97nF |
40V 50A 3V 65W 1 N-channel TO-252(DPAK) Single FETs, MOSFETs RoHS