onsemi FDD8444

onsemi · FETs & Power MOSFETs · MPN FDD8444

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Specifications

Gate Charge(Qg)116nC@10V
Drain to Source Voltage40V
Output Capacitance(Coss)585pF
Current - Continuous Drain(Id)145A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation153W
Reverse Transfer Capacitance (Crss@Vds)332pF
RDS(on)9.4mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)6.195nF
Type-

Technical details

40V 145A 4V 153W 9.4mΩ@10V 1 N-channel TO-252(DPAK) Single FETs, MOSFETs RoHS

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