onsemi · FETs & Power MOSFETs · MPN FDD7N60NZTM
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| Gate Charge(Qg) | 17nC@10V |
|---|---|
| Drain to Source Voltage | 600V |
| Current - Continuous Drain(Id) | 5.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 90W |
| Reverse Transfer Capacitance (Crss@Vds) | 10pF |
| RDS(on) | 1.05Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 730pF |
N-Channel 600V 5.5A 90W Surface Mount TO-252(DPAK)