onsemi · FETs & Power MOSFETs · MPN FDD7N25LZTM
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| Gate Charge(Qg) | 16nC@10V |
|---|---|
| Drain to Source Voltage | 250V |
| Current - Continuous Drain(Id) | 6.2A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 56W |
| Reverse Transfer Capacitance (Crss@Vds) | 12pF |
| RDS(on) | 450mΩ@5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 635pF |
N-Channel 250V 6.2A 56W Surface Mount TO-252(DPAK)