onsemi FDD7N20TM

onsemi · FETs & Power MOSFETs · MPN FDD7N20TM

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Specifications

Gate Charge(Qg)6.7nC@10V
Drain to Source Voltage200V
Output Capacitance(Coss)65pF
Current - Continuous Drain(Id)5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation43W
Reverse Transfer Capacitance (Crss@Vds)10pF
RDS(on)690mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)250pF
TypeN-Channel

Technical details

N-Channel 200V 5A 43W Surface Mount TO-252(DPAK)

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