onsemi FDD770N15A

onsemi · FETs & Power MOSFETs · MPN FDD770N15A

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Specifications

Gate Charge(Qg)11nC@10V
Drain to Source Voltage150V
Current - Continuous Drain(Id)18A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation56.8W
Reverse Transfer Capacitance (Crss@Vds)6pF
RDS(on)61mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)765pF

Technical details

N-Channel 150V 18A 56.8W Surface Mount TO-252(DPAK)

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