onsemi · FETs & Power MOSFETs · MPN FDD6N50TM
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| Gate Charge(Qg) | 16.6nC@400V |
|---|---|
| Drain to Source Voltage | 500V |
| Current - Continuous Drain(Id) | 6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 89W |
| Reverse Transfer Capacitance (Crss@Vds) | 13.5pF |
| RDS(on) | 900mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 940pF |
500V 6A 5V 89W 900mΩ@10V 1 N-channel TO-252(DPAK) Single FETs, MOSFETs RoHS