onsemi · FETs & Power MOSFETs · MPN FDD6N25TF
No reviews yet — be the first to review onsemi FDD6N25TF.
| Gate Charge(Qg) | 6nC@10V |
|---|---|
| Drain to Source Voltage | 250V |
| Output Capacitance(Coss) | 50pF |
| Current - Continuous Drain(Id) | 4.4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 50W |
| Reverse Transfer Capacitance (Crss@Vds) | 8pF |
| RDS(on) | 1.1Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 250pF |
| Type | N-Channel |
250V 4.4A 5V 50W 1.1Ω@10V 1 N-channel N-Channel TO-252(DPAK) Single FETs, MOSFETs RoHS