onsemi FDD6796A

onsemi · FETs & Power MOSFETs · MPN FDD6796A

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Specifications

Drain to Source Voltage25V
Gate Charge(Qg)24nC@10V
Output Capacitance(Coss)400pF
Current - Continuous Drain(Id)67A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation42W
Reverse Transfer Capacitance (Crss@Vds)400pF
RDS(on)15mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)1.78nF
TypeN-Channel

Technical details

25V 67A 3V 42W 15mΩ@4.5V 1 N-channel N-Channel TO-252(DPAK) Single FETs, MOSFETs RoHS

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