onsemi FDD6690A

onsemi · FETs & Power MOSFETs · MPN FDD6690A

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Specifications

Gate Charge(Qg)18nC@15V
Drain to Source Voltage30V
Current - Continuous Drain(Id)46A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1.9V
Pd - Power Dissipation56W
Reverse Transfer Capacitance (Crss@Vds)150pF
RDS(on)14mΩ
Number1 N-channel
Input Capacitance(Ciss)1.23nF

Technical details

30V 46A 1.9V 56W 14mΩ 1 N-channel TO-252 Single FETs, MOSFETs RoHS

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