onsemi · FETs & Power MOSFETs · MPN FDD6670S
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 24nC@10V |
| Output Capacitance(Coss) | 526pF |
| Current - Continuous Drain(Id) | 64A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 100W |
| Reverse Transfer Capacitance (Crss@Vds) | 186pF |
| RDS(on) | 12.5mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.01nF |
| Type | N-Channel |
30V 64A 3V 100W 12.5mΩ@4.5V 1 N-channel N-Channel TO-252(DPAK) Single FETs, MOSFETs RoHS