onsemi FDD6670AL_NL

onsemi · FETs & Power MOSFETs · MPN FDD6670AL_NL

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Specifications

Gate Charge(Qg)56nC@5V
Drain to Source Voltage30V
Output Capacitance(Coss)930pF
Current - Continuous Drain(Id)84A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation100W
Reverse Transfer Capacitance (Crss@Vds)368pF
RDS(on)6mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)3.845nF
TypeN-Channel

Technical details

30V 84A 3V 100W 6mΩ@4.5V 1 N-channel N-Channel TO-252(DPAK) Single FETs, MOSFETs RoHS

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