onsemi · FETs & Power MOSFETs · MPN FDD6670A
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| Gate Charge(Qg) | 22nC@5V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 15A;66A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 3.2W;63W |
| RDS(on) | 8mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.755nF |
30V 3V 8mΩ@10V 1 N-channel TO-252 Single FETs, MOSFETs RoHS