onsemi FDD6637

onsemi · FETs & Power MOSFETs · MPN FDD6637

No reviews yet — be the first to review onsemi FDD6637.

Specifications

Gate Charge(Qg)63nC@10V
Drain to Source Voltage35V
Output Capacitance(Coss)470pF
Current - Continuous Drain(Id)55A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation57W
Reverse Transfer Capacitance (Crss@Vds)250pF
RDS(on)18mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)2.37nF
TypeP-Channel

Technical details

P-Channel 35V 55A 57W Surface Mount TO-252(DPAK)

Related FETs & Power MOSFETs