onsemi · FETs & Power MOSFETs · MPN FDD6637
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| Gate Charge(Qg) | 63nC@10V |
|---|---|
| Drain to Source Voltage | 35V |
| Output Capacitance(Coss) | 470pF |
| Current - Continuous Drain(Id) | 55A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Pd - Power Dissipation | 57W |
| Reverse Transfer Capacitance (Crss@Vds) | 250pF |
| RDS(on) | 18mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 2.37nF |
| Type | P-Channel |
P-Channel 35V 55A 57W Surface Mount TO-252(DPAK)