onsemi · FETs & Power MOSFETs · MPN FDD6635
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| Gate Charge(Qg) | 36nC@10V |
|---|---|
| Drain to Source Voltage | 35V |
| Current - Continuous Drain(Id) | 59A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.9V |
| Pd - Power Dissipation | 55W |
| Reverse Transfer Capacitance (Crss@Vds) | 137pF |
| RDS(on) | 13mΩ |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.4nF |
35V 59A 1.9V 55W 13mΩ 1 N-channel TO-252 Single FETs, MOSFETs RoHS